Articles you may be interested inSurface micromachining of a thin film microresonator using dry decomposition of a polymer sacrificial layerThe development of a new fabrication technique of Teflon microparts using synchrotron radiation ͑SR͒ irradiation, the SR ablation process, was described. The anisotropic micromachining and thin film formation of polytetrafluoroethylene, fluorinated ethylene propylene, and perfluoroalkoxy were demonstrated using the SR ablation process. The anisotropic micromachining of Teflon with hole pattern of 2 m diam was successfully performed, and the micromachining of Teflon with a high aspect ratio of 50 was achieved. Moreover, Teflon films with flat surface were formed at a high rate by the SR ablation of Teflon at the substrate temperature above 200°C.
A radical injection technique (RIT) was developed to evaluate CF2 radical as a precursor for fluorocarbon film formation in a highly selective SiO2 etching process. Using RIT, the CF2 radical was successfully injected into electron cyclotron resonance (ECR) downstream plasmas employing Ar and H2/Ar mixtures. The fluorocarbon films formed on the Si surfaces exposed to ECR downstream plasmas were investigated using X-ray photoelectron spectroscopy. The deposition rate of fluorocarbon films was measured by varying microwave power in the Ar and H2/Ar ECR plasmas while keeping CF2 radical density constant using RIT. From the experimental results, it was found that the CF2 radical was the important precursor for fluorocarbon film formation only with the assistance of the surface activation due to the plasma exposure and that H atoms and CF2 radicals in the plasma played an important role in the formation of carbon-rich fluorocarbon film resulting in highly selective SiO2 etching. Furthermore, the highly selective SiO2 etching was demonstrated using the H2/Ar ECR downstream plasma with CF2 radical injection.
Both anisotropic ablation and thin film formation of polytetrafluoroethylene (PTFE) were successfully demonstrated using synchrotron radiation (SR) irradiation of PTFE, that is, the SR ablation process. Anisotropic ablation by the SR irradiation was performed at an extremely high rate of 3500 µm/min at a PTFE target temperature of 200° C. Moreover, a PTFE thin film was formed at a high rate of 2.6 µm/min using SR ablation of PTFE. The chemical structure of the deposited film was similar to that of the PTFE target as determined from Fourier transform infrared absorption spectroscopy (FT-IR) analysis.
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