Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm.

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Transition metal dichalcogenides (TMDs) with a unique sandwich structure have attracted tremendous attention in recent years due to their distinctive electrical and optical properties. The performance of TMDs can be tailored by integration with low dimensional nanostructures which possess quantum size effects and large specific surface areas. In this review, we give a brief description of integrated structures, their synthesis methods, and highlight the applications in hydrogen production, lithium batteries, sensors and detectors.