Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin-Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Our results offer a pathway to utilize the orbital current to further enhance the magnetization switching efficiency in spin-orbit-torque-based spintronic devices.
This study presents an effective method for recovering unbroken solar cells from photovoltaic (PV) modules. The combustion process is effective at removing ethylene vinyl acetate (EVA) in PV modules. However, the solar cell tends to break during the combustion process. We verify that the breakage mechanisms of the solar cell in the module are related to the thermal changes of EVA during the heat treatment process, that is, generated gases form bubbles behind the glass, and the thermal deformation of the rear EVA applies stress to the solar cell. This study investigates the simple pretreatments of glass cracking and EVA patterning to prevent the breakage behavior. An unbroken solar cell was successfully recovered from the module after complete EVA removal using the combustion process. The recovered solar cell was immersed in a mixed acid solution of HNO 3 and HF to reclaim the crystalline silicon wafer, which subsequently underwent the solar cell manufacturing process. The PV performances of the solar cells based on the reclaimed wafer and a commercial wafer were evaluated and compared. The PV performance of the solar cell manufactured from the reclaimed wafer was measured at 18.5%, whereas that from the commercial wafer-based solar cell was measured at 18.7%. Consequently, the considered pretreatment processes yielded solar cells acceptable for use in the PV industry.
Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.
Physical unclonable function (PUFs) utilize inherent random physical variations of solid‐state devices and are a core ingredient of hardware security primitives. PUFs promise more robust information security than that provided by the conventional software‐based approaches. While silicon‐ and memristor‐based PUFs are advancing, their reliability and scalability require further improvements. These are currently limited by output fluctuations and associated additional peripherals. Here, highly reliable spintronic PUFs that exploit field‐free spin–orbit‐torque switching in IrMn/CoFeB/Ta/CoFeB structures are demonstrated. It is shown that the stochastic switching polarity of the perpendicular magnetization of the top CoFeB can be achieved by manipulating the exchange bias directions of the bottom IrMn/CoFeB. This serves as an entropy source for the spintronic PUF, which is characterized by high entropy, uniqueness, reconfigurability, and digital output. Furthermore, the device ensures a zero bit‐error‐rate under repetitive operations and robustness against external magnetic fields, and offers scalable and energy‐efficient device implementations.
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