We have solved the long-standing problem of the mechanism of terahertz (THz) generation by a two-color filament in air and found that both neutrals and plasma contribute to the radiation. We reveal that the contribution from neutrals by four-wave mixing is much weaker and higher in frequency than the distinctive plasma lower-frequency contribution. The former is in the forward direction while the latter is in a cone and reveals an abrupt down-shift to the plasma frequency. Ring-shaped spatial distributions of the THz radiation are shown to be of universal nature and they occur in both collimated and focusing propagation geometries. Experimental measurements of the frequency-angular spectrum generated by 130-fs laser pulses agree with numerical simulations based on a unidirectional pulse propagation model.

We demonstrate that the two basic physical mechanisms of terahertz (THz) generation in a femtosecond filament, namely, the free electron photocurrent and the nonlinear polarization of neutrals, can be identified through the spectral analysis of THz radiation. The contribution from the photocurrent peaks at the units of THz, while the neutrals yield the peak at the tens of THz. We suggest the practical implementation of such spectral analysis by varying the initial transform-limited laser pulse duration.

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The effective preparation method of epitaxial VO2 films on the r-Al2O3 substrates based on the MOCVD technique and postdeposition annealing is described. The composition, orientation and morphology of the films obtained were investigated by Raman spectroscopy, XRD, EBSD, XPS, SEM and AFM methods. The samples obtained demonstrate high crystal quality and excellent physical properties: sharp metal-insulator (>10 4 resistance change) and intensive optical reflectivity (IR and THz regions) transitions. The model of VO2 films recrystallization based on the peritectic decomposition of intergrain vanadium oxide phases is proposed.The new effective chemical synthesis of the epitaxial VO 2 films with record electrical and optical switch properties is presented.