Stretchable and conformable synapse memristors that can emulate the behaviour of the biological neural system and well adhere onto the curved surfaces simultaneously are desirable for the development of imperceptible wearable and implantable neuromorphic computing systems. Previous synapse memristors have been mainly limited to rigid substrates. Herein, a stretchable and conformable memristor with fundamental synaptic functions including potentiation/depression characteristics, long/short-term plasticity (STP and LTP), "learning-forgetting-relearning" behaviour, and spike-rate-dependent and spike-amplitude-dependent plasticity is demonstrated based on highly elastic Ag nanoparticle-doped thermoplastic polyurethanes (TPU : Ag NPs) and polydimethylsiloxane (PDMS). The memristor can be well operated even at 60% strain and can be well conformed onto the curved surfaces. The formed conductive filament (CF) obtained from the movement of Ag nanoparticle clusters under the locally enhanced electric field gives rise to resistance switching of our memristor. These results indicate a feasible strategy to realize stretchable and conformable synaptic devices for the development of new-generation artificial intelligence computers.
Ultraflexible and degradable organic synaptic transistors (OSTs) enable seamless integration with the human body and are capable of disintegrating after completing their specific functions, opening up remarkable new opportunities for “green” electronics in implantable neuromorphic systems, brain‐computer interfaces and wearable artificial intelligence systems. However, it is still an outstanding challenge to realize such synaptic transistors that simultaneously satisfy both ultra flexibility and degradability. The advancement of such electronics critically hinges on the development of ultraflexible and degradable gate dielectrics, which is the vital component to realize synaptic function of transistors. Here, for the first time, a self‐supporting natural dextran membrane is utilized as the gate dielectric to achieve an ultraflexible and degradable OST. The resultant device is only 309 nm thick, and can maintain stable synaptic behavior on various curved surfaces, even on a superfine capillary with the bending radius down to 0.15 mm. After the devices complete their functions, they can rapidly degrade in ambient water without any toxic byproducts, effectively reducing environmental pollution. More strikingly, proton conduction is confirmed to exist in neutral polysaccharides, and the protons originate from the self‐dissociation of water, which provides a meaningful guideline for future synaptic transistors based on neutral natural biomaterials.
Bioelectronics in synaptic transistors for future biomedical applications, such as implanted treatments and human-machine interfaces, must be flexible with good mechanical compatibility with biological tissues. The rigid nature and high deposition temperature in conventional inorganic synaptic transistors restrict the development of flexible, conformal synaptic devices. Here, the dinaphtho[2,3-b:2′,3′-f ]thieno[3,2-b]-thiophene organic synaptic transistor on elastic polydimethylsiloxane is demonstrated to avoid these limitations. The unique advantages of organic materials in low Young's modulus and low temperature process enable seamless adherence of organic synaptic transistors on arbitrary-shaped objects. On 3D curved surfaces, the essential synaptic functions, such as potentiation/depression, short/long-term synaptic plasticity, and spike voltage-dependent plasticity, are successfully realized. The time-dependent surface potential characterization reveals the slow polarization of dipoles in the dielectric is responsible for hysteresis and synaptic behaviors. This work represents that organic materials offer a potential platform to realize the flexible, conformal synaptic transistors for the development of wearable and implantable artificial neuromorphic systems.
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