Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer's effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

A major breakthrough in the field of organic photovoltaics (OPVs) was the development of the donor/acceptor heterojunction that aids in separating Coulombically bound excitons that are generated upon photoabsorption. Additionally, bound charge transfer (CT) states that result from the exchange of charge carriers across the donor/acceptor interface are believed to play an important role in charge generation. Though organic thin films are often disordered, enhancements to the local structural order at the donor/acceptor interface have recently been shown to greatly influence CT state energetics and the charge generation process. In this progress report, recent efforts to understand the role that donor/acceptor morphology plays in the behavior of CT states and the resulting implications on OPV function are presented. It is aimed to provide a survey of different experimental approaches and to present a balanced examination of current interpretations of key results, and to offer best practices for the fabrication and study of morphologically tunable donor/acceptor CT states.

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In this work, we discovered a very efficient method of crystallization of thermally evaporated rubrene, resulting in ultrathin, large-area, fully connected, and highly crystalline thin films of this organic semiconductor with a grain size of up to 500 μm and charge carrier mobility of up to 3.5 cm2 V–1 s–1. We found that it is critical to use a 5 nm-thick organic underlayer on which a thin film of amorphous rubrene is evaporated and then annealed to dramatically influence the ability of rubrene to crystallize. The underlayer property that controls this influence is the glass transition temperature. By experimenting with different underlayers with glass transition temperatures varying over 120 °C, we identified the molecules leading to the best crystallinity of rubrene films and explained why values both above and below the optimum result in poor crystallinity. We discuss the formation of different crystalline morphologies of rubrene produced by this method and show that field-effect transistors made with films of a single-domain platelet morphology, achieved through the aid of the optimal underlayer, outperform their spherulite counterparts with a nearly four times higher charge carrier mobility. This large-area crystallization technique overcomes the fabrication bottleneck of high-mobility rubrene thin film transistors and other related devices and, given its scalability and patternability, may lead to practical technologies compatible with large-area flexible electronics.

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