The recent discovery of ferromagnetic single-layer CrI creates ample opportunities for studying the fundamental properties and the spintronic applications of atomically thin magnets. Through first-principles calculations and model Hamiltonian simulations, here we build for the first time a substantial magnetic phase diagram under lateral strain and charge doping, the two factors that are easily modulated in single-layer CrIvia substrate and gating controls. We demonstrate that both lateral strain and charge doping efficiently change the coupling between the local spins and thus have unexpected effects on the magnetic properties of CrI. In particular, the strain tunes the magnetic order and anisotropy: a compressive strain leads to a phase transition from a ferromagnetic insulator to an antiferromagnetic insulator, while a tensile strain can flip the magnetic orientation from off-plane to in-plane. Furthermore, we find that the phase transition under compressive strain is insensitive to charge doping, whereas the phase transition under tensile strain is modulated by electron doping significantly. Our predicted magnetic phase diagram and rationalized analysis indicate the single-layer CrI to be an ideal system to harness both basic magnetic physics and building blocks for magnetoelastic applications.
Contribution of d-electron to ferroelectricity of type-II multiferroics causes strong magneto-electric coupling and distinguishes them from the conventional type-I multiferroics. However, their therein polarization is too small because the ferroelectricity is merely a derivative from the magnetic order.Here we report a new class of multiferroic materials, monolayer VOX2 (X = Cl, Br, and I), which combine the advantages of type-I and type-II multiferroics. Both ferroelectricity and magnetism arise from the same V cation, where the filled d-orbital is perpendicular to an a priori ferroelectric polarization and thus poses no hindrance to ferroelectricity, indicating a violation of the usual d 0 rule. This makes the combination of large polarizations and strong magneto-electric coupling possible. Our findings not only add new ferromagnetic-ferroelectric multiferroics, but also point to a unique mechanism to engineer multiferroics.
We show that flexoelectric effect is responsible for the non-Ising character of a 180°ferroelectric domain wall. The wall, long considered being of Ising type, contains both Bloch-and Néel-type polarization components. Using the example of classic ferroelectric BaTiO 3 , and by incorporating the flexoelectric effect into a phase-field model, it is demonstrated that the flexoelectric effect arising from stress inhomogeneity around the domain wall leads to the additional Bloch and Néel polarization components. The magnitudes of these additional components are two or three magnitudes smaller than the Ising component, and they are determined by the competing depolarization and flexoelectric fields. Our results from phase-field model are consistent with the atomistic scale calculations. The results prove the critical role of flexoelectricity in defining the internal structure of ferroelectric domain walls.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.