The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on the exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.
Amorphous oxide semiconductors have been studied primarily as the active semiconducting material for thin film transistors for active matrix display and transparent/flexible electronic applications. Recent results on printed amorphous oxide semiconductors for thin film transistors, the role of surface functionalization, and the integration of these materials for resistive random access memory applications will be described.
Second and third order nonlinear optical properties of microrod ZnO films deposited on sapphire substrates by thermal oxidation of metallic zincThe thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x ray diffraction, and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 C or higher, where nanoflakes, nanoribbons, nanoneedles, and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.
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