The clinical courses of 10 eyes of five diabetic patients who exhibited bilateral transient hyperopia (maximum: 1-1-4*9 dioptres, spherical equivalent) after initiation of strict control of diabetes with or without insulin are reported. The hyperopia occurred within a few days after abrupt decrease in plasma glucose, progressed to maximum at days 7-14, and regressed gradually over 1 month thereafter. Transient cycloplegia had no effect on refractive error. During hyperopia, there were no significant changes in axial length or corneal curvature. However, thickened lens, decreased anterior chamber depth, and transient cataract were observed to significant degrees. It is suggested that the transient hyperopia, with lens swelling and opacity, was caused by decreased lens refractive index following water influx.
Strongly c-axis oriented Pb(ZrxTi1−x)O3 (PZT) thin films with tetragonal perovskite structure (0.45≤x≤0.52) were epitaxially grown on (100)Pt/(100)MgO substrates using metalorganic chemical vapor deposition. Film thickness could be varied by altering the growth time. The electrical properties of PZT thin films sharply change below a thickness of 0.5 μm: the dielectric constant and remanent polarization decrease while the coercive field increases. These phenomena are explained by a model in which a layer with low dielectric constant exists in series with the normal PZT layer. The origins of this layer are systematically studied and found to be the intrinsic stress produced by the coalescence of crystal grains.
Strongly c-axis oriented Pb (ZrxTi1-x) O3 thin films were successfully grown on (100) Pt/(100) MgO substrate using the metalorganic chemical vapor deposition (MOCVD) method . The electrical properties of PZT thin films with thickness of 2ƒÊm are almost the same values of PZT single crystal . But they sharply change below film thickness of 0.5ƒÊm: dielectric constant and remanent polarization decrease , and coercive field increases. These phenomena are explained by the model that low dielectric constant layer exist in series with normal PZT layer.The origins of this layer is considered to be the intrinsic stress produced by the coalescence of crystal grains .
Magneto-optic bismuth-substituted yttrium iron garnet thin films were epitaxially grown during deposition for the first time by metalorganic chemical vapor deposition. Triphenyl bismuth and both yttrium and iron tridipivaloylmethane were used as source materials. Prior to the preparation of garnet films, the deposition behavior of Y2O3, Fe2O3, and Bi2O3 films was examined separately. Epitaxially grown films were as-deposited on a Gd3Ga5O12(111) substrate at 750 °C under a reduced pressure of 6 Torr with a deposition rate of 200–500 Å/min, which is about 10 times faster than that obtained by the conventional sputtering method. A film with a bismuth content of 2.5 atoms per formula unit showed a large Faraday rotation, − 7.5 × 104 deg/cm at λ=633 nm, because of the high bismuth substitution and the crystalline perfection.
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