Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. The multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed-potential deposition technique. The thickness of the Cu layer was adjusted from ca. 2 to 4 nm while that of the Co layer was regulated from ca. 13 to 51 nm by controlling the pulsed potential parameters. To get a Co/Cu multilayered nanowire in an electrochemical in-situ contact with a sputter-deposited Au thin layer, the pulsed potential deposition was continued up to ca. 5000 cycles until the nanowire reached out toward the surface of AAO template. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ca. 23.5% at room temperature in Co/Cu multilayered nanowires with ca. 3500 Co/Cu bilayers (Cu: 1.4 nm and Co: 18.8 nm). When decreasing the thickness of Co layer, the CPP-GMR value increased due to the Valet–Fert model in the long spin diffusion limit.

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Anodized aluminum oxide (AAO) nanochannels of diameter, D, of ~50 nm and length, L, of ~60 µm (L/D: approx. 1200 in the aspect ratio), were synthesized and applied as an electrode for the electrochemical growth of Co/Cu multilayered heterojunction nanocylinders. We synthesized numerous Co/Cu multilayered nanocylinders by applying a rectangular pulsed potential deposition method. The Co layer thickness, tCo, ranged from ~8 to 27 nm, and it strongly depended on the pulsed-potential condition for Co layers, ECo. The Cu layer thickness, tCu, was kept at less than 4 nm regardless of ECo. We applied an electrochemical in situ contact technique to connect a Co/Cu multilayered nanocylinder with a sputter-deposited Au thin layer. Current perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ~23% in a Co/Cu multilayered nanocylinder with ~4760 Co/Cu bilayers (tCu: 4 nm and tCo: 8.6 nm). With a decrease in tCo, (ΔR/Rp)−1 was linearly reduced based on the Valet–Fert equation under the condition of tF > lFsf and tN < lNsf. The cobalt spin-diffusion length, lCosf, was estimated to be ~12.5 nm.

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