Exposure of metal surfaces to multiple ultrashort laser pulses under certain conditions leads to the formation of well-defined periodic surface structures. We show how the period of such structures in steel can be tuned over a wide range by controlling the complex interaction mechanisms triggered in the material. Amongst the different irradiation parameters that influence the properties of the induced structures, the angle of incidence of the laser beam occupies a prominent role. We present an experimental and theoretical investigation of this angle dependence in steel upon irradiation with laser pulses of 120 fs duration and 800 nm wavelength, while moving the sample at constant speed. Our findings can be grouped into two blocks. First, we observe the spatial coexistence of two different ripple periods at the steel surface, both featuring inverse scaling upon angle increase, which are related to forward and backward propagation of surface plasmon polaritons. To understand the underlying physical phenomena, we extend a recently developed model that takes into account quantitative properties of the surface roughness to the case of absorbing metals (large imaginary part of the dielectric function), and obtain an excellent match with the experimentally observed angle dependence. As second important finding, we observe a quill writing effect, also termed non-reciprocal writing, in form of a significant change of the ripple period upon reversing the sample movement direction. This remarkable phenomenon has been observed so far only inside dielectric materials and our work underlines its importance also in laser surface processing. We attribute the origin of symmetry breaking to the non-symmetric micro-and nanoscale roughness induced upon static multiple pulse irradiation, leading to non-symmetric modification of the wavevector of the coupled surface plasmon polariton.

The local modification of the composition of glasses by high repetition femtosecond laser irradiation is an attractive method for producing photonic devices. Recently, the successful production of waveguides with a refractive index contrast (Δn) above 10−2 by fs-laser writing has been demonstrated in phosphate glasses containing La2O3 and K2O modifiers. This large index contrast has been related to a local enrichment in lanthanum in the light guiding region accompanied by a depletion in potassium. In this work, we have studied the influence of the initial glass composition on the performance of waveguides that are produced by fs-laser induced element redistribution (FLIER) in phosphate-based samples with different La and K concentrations. We have analyzed the contribution to the electronic polarizability of the different glass constituents based on refractive index measurements of the untreated samples, and used it to estimate the expected index contrast caused by the experimentally measured local compositional changes in laser written guiding structures. These estimated values have been compared to experimental ones that are derived from near field images of the guided modes with an excellent agreement. Therefore, we have developed a method to estimate before-hand the expected index contrast in fs-laser written waveguides via FLIER for a given glass composition. The obtained results stress the importance of considering the contribution to the polarizability of all the moving species when computing the expected refractive index changes that are caused by FLIER processes.

The measurement of the refractive index of optical waveguides is a difficult task that involves different methods, among which those based on the refracted near field determination (RNF) are likely the ones providing the best resolution. Still, most such methods lack spectral resolution, which impedes accessing the index dispersion of the waveguide, an essential parameter for many applications. In this work, the refractive index of channel waveguides produced by fs‐laser induced ion‐migration in a P2O5‐La2O3‐K2O‐based glass is measured by imaging ellipsometry. Along with EDX compositional maps and guiding performance, the dispersion and refractive index maps of several waveguides are measured. The results confirm that, in this glass, waveguides are formed due to an enrichment in La in the topmost part of the laser‐excited region which is accompanied by the cross migration of K toward the region underneath. Interestingly, the index contrast of the waveguides shows a wavelength‐independent behavior for wavelengths above ≈600 nm. This indicates that in the compositional range analyzed, La3+ ions linearly contribute to the glass polarizability due to the relatively large mass of La3+ ions and the relatively small size of the isolated La‐polyhedra accommodated in the phosphate glass network.

Semi-transparent solar cells are the next step for photovoltaics into our daily life. Over the last years, kesterite-type material has attracted a special attention to be used as an absorber in thin-film solar cells because of its low toxicity and earth abundant constituents. Here, Cu2ZnGeSe4 (CZGSe) thin films are grown by co-evaporation and subsequent annealing at a maximum temperature of 480 °C or 525 °C onto Mo/V2O5/FTO/glass stacks. The goal of this work is to investigate the influence of the annealing temperature on the composition, morphology, vibrational properties, and transmittance of CZGSe layers, the formation of secondary phases, and distribution of elements within the absorber layer as well as on the optoelectronic properties of the corresponding solar cell devices. Raising the annealing temperature to 525 °C leads to a more uniform distribution of Cu, Zn, Ge and Se throughout the absorber layer, a reduction of the presence of the GeSe2 secondary phase, which is mainly detected at 480 °C, a larger grain size and the formation of a thicker MoSe2 layer at the CZGSe/back contact interface. The strategy of increasing the annealing temperature allows for improved J–V characteristics and higher spectral response resulting in an enhanced device performance of 5.3% compared to 4.2% when using 525 °C and 480 °C, respectively. Both absorber layers present an optical band gap energy of 1.47 eV. Furthermore, higher annealing temperature has beneficial effect to the CZGSe-based devices without losses in total transmitted light because of the higher diffuse transmittance. This work shows first promising semi-transparent CZGSe-based solar cells possibly open up new routes of applications.