Enhancing energy/power density of electrochemical energy storage devices is a hot topic in the present‐day science community. The electrochemical performance of these devices is strongly bound by the fundamental nature of the electrodes in terms of reaction mechanism, crystal structure, electrons/ions transfer kinetics and so on. These features are also the main challenge for the previously investigated electrodes (e. g. carbon, metal oxides/sulfides). Recently, tellurium and telluride‐based materials have aroused increasing interest in the energy storage field due to their high electronic conductivity, conducive crystal structure, and superior volumetric capacity. To provide a better understanding of the fundamental properties and energy storage performance of tellurium and telluride‐based materials, we first introduced the various physical‐chemical properties of telluride‐based materials. Then, we summarize the latest research advances in the field of energy storage with these materials, including essential physical‐chemical properties, synthetic methods, design strategies, and electrochemical performances. The future perspectives and challenges of tellurides aiming for practical application are discussed at last.
Owing to the large interlayer spacing and the excellent theoretical capacity of MoSe2, it has great potential to be applied as an anode material for sodium‐ion batteries. However, the rate performance of MoSe2 is strongly limited by the insufficient intrinsic electron transfer kinetics. Herein, a simple two‐step hydrothermal method to construct MoSe2/Bi2Se3 heterostructures was developed by growing MoSe2 nanosheets onto Bi2Se3 nanoflakes directly. The typical topological insulator possesses ultrafast surface electronic conductivity, which makes the batteries exhibit a superior rate capability and considerable cycling stability. At a high rate of 10 A g−1, the MoSe2/Bi2Se3 electrode still delivered a superior capacity of 244 mA h g−1 (about 60 % of the discharge capacity at 0.1 A g−1), which is better than that in some of the previously reported MoSe2/carbon composites. It also can compare with some of the MoSe2‐containing complex sandwich architectures. Such unique rate performance is bound strongly with high interlayer spacing and rapid electron transfer kinetics. Besides, the different Fermi level energies of Bi2Se3 (work function is 5.61 eV) and MoSe2 (work function is 4.3 eV) probably induce a built‐in electric field nearby the heterofaces. The electric force could promote Na ions diffusibility upon cycling, leading to high reversible capacity and excellent rate performance.
In this study, the unipolar resistive switching (URS) and bipolar resistive switching (BRS) are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies (V O ) and metal-Ag conducting filaments (CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching (RS) characteristics (e.g., forming and switching voltages, reset current and resistance states) between these two modes based on V O -and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.