We wish to present in this report experimental results from a one-year Senior Council Tier-1 LDRD project that focused on understanding the physics of a possible nonAbelian fractional quantum Hall effect state. We first give a general introduction to the quantum Hall effect, and then present the experimental results on the edge-state transport in a special fractional quantum Hall effect state at Landau level filling =5/2 -a possible non-Abelian quantum Hall state. This state has been at the center of current basic research due to its potential applications in fault-resistant topological quantum computation. We will also describe the semiconductor "Hall-bar" devices we used in this project. 4 5
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