Reduced
graphene oxide (rGO) has attracted significant interest
in an array of applications ranging from flexible optoelectronics,
energy storage, sensing, and very recently as membranes for water
purification. Many of these applications require a reproducible, scalable
process for the growth of large-area films of high optical and electronic
quality. In this work, we report a one-step scalable method for the
growth of reduced-graphene-oxide-like (rGO-like) thin films via pulsed laser deposition (PLD) of sp2 carbon
in an oxidizing environment. By deploying an appropriate laser beam
scanning technique, we are able to deposit wafer-scale uniform rGO-like
thin films with ultrasmooth surfaces (roughness <1 nm). Further, in situ control of the growth environment during the PLD
process allows us to tailor its hybrid sp2–sp3 electronic structure. This enables us to control its intrinsic
optoelectronic properties and helps us achieve some of the lowest
extinction coefficients and refractive index values (0.358 and 1.715,
respectively, at 2.236 eV) as compared to chemically grown rGO films.
Additionally, the transparency and conductivity metrics of our PLD
grown thin films are superior to other p-type rGO films and conducting
oxides. Unlike chemical methods, our growth technique is devoid of
catalysts and is carried out at lower process temperatures. This would
enable the integration of these thin films with a wide range of material
heterostructures via direct growth.
Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d -5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displacement and spin-correlated interfacial coupling through charge transfer. We report on a tunable and enhanced interface-induced Rashba spin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3 bilayer with change in the underlying magnetic order of LaMnO3. We also observed enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared to previously reported SrIrO3 layers. The X-Ray spectroscopy measurement reveals the quantitative valence of Mn and their impact on charge transfer. Further, we performed angle-dependent magnetoresistance measurements, which show signatures of magnetic proximity effect in SrIrO3 while reflecting the magnetic order of LaMnO3. Our work thus demonstrates a new route to engineer the interface induced Rashba spin-orbit coupling and magnetic proximity effect in 3d -5d oxide interfaces which makes SrIrO3 an ideal candidate for spintronics applications.
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