Articles you may be interested inAnalysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy Angle-resolved x-ray photoelectron spectroscopy ͑AR-XPS͒ is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiO x N y films. With furnace growth at 800-850°C using nitric oxide ͑NO͒ and oxygen, 10 13 -10 15 cm Ϫ2 of nitrogen is incorporated in the ultrathin (р4 nm͒ oxide films. Additional nitrogen can be incorporated by low energy ion ( 15 N 2 ) implantation. The nitrogen profile and nitrogen chemical bonding states are analyzed as a function of the depth to understand the distribution of nitrogen incorporation during the SiO x N y thermal growth process. AR-XPS is shown to yield accurate nitrogen profiles that agree well with both medium energy ion scattering and secondary ion mass spectrometry analysis. Preferential nitrogen accumulation near the SiO x N y /Si interface is observed with a NO annealing, and nitrogen is shown to bond to both silicon and oxygen in multiple distinct chemical states, whose thermal stability bears implications on the reliability of nitrogen containing SiO 2 .
Oxynitrides can suppress the diffusion of boron from the polycrystalline silicon gate electrode to the channel region of an ultralarge scale integrated device, and are therefore important potential substrates for thin SiO2 gates. Direct oxynitridation of Si in N2O is a simple and manufacturable N incorporation scheme. We have used rapid thermal oxidation to grow O2- and N2O-oxides of technological importance (∼10 nm thick) in the temperature range 800–1200 °C. Accurate measurements of the N content of the N2O-oxides were made using nuclear reaction analysis. N content increases linearly with oxidation temperature, but is in general small. A 1000 °C N2O-oxide contains about 7×1014 N/cm2, or the equivalent of about one monolayer of N on Si (100). Nonetheless, this small amount of N can retard boron penetration through the dielectric by two orders of magnitude as compared to O2-oxides. The N is contained in a Si-O-N phase within about 1.5 nm of the Si/SiO2 interface, and can be pushed away from the interface by O2-reoxidation. We have measured Si/SiO2 interfacial roughness by x-ray reflectometry, and found that it decreases with increasing oxidation temperature for both O2- and N2O-oxides, although the N2O-oxides are smoother. The enhanced smoothness of N2O-oxides is greater the greater the N content. N2O-oxides are promising candidates for thin ultralarge scale integrated circuit gate dielectrics.
Articles you may be interested inIon-surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical-vapor deposition J.Free silicon and crystallization in silicon nitride based ceramics and in oxynitride glasses
Tungsten films have been selectively deposited (i.e., deposited on Si and TaSi2 to the exclusion of SiO2 ) by LPCVD via the reduction of WF6 by either Si or H2 . Films formed by H2 reduction can be unlimited in thickness; however, those formed by Si reduction are self‐limited in thickness to about 150Å. The effects of deposition parameters such as temperature and WF6 and H2 flow rates on the properties of the W films have been investigated. To prevent excessive erosion of Si in window areas, the volumetric flow ratio of H2 to WF6 must be larger than the critical value of about three. Typical films are polycrystalline with an average grain size of 2000Å and exhibit a tensile film stress of about 7×109 normaldyn/cm2 . W film resistivity is found to be about 13 μΩ‐cm for a 1000Å film, resulting in a sheet resistance of 1.3 Ω/□. The W films exhibit good contact resistance to N+ and P+ Si, and are also found to be excellent diffusion barriers between Al and Si at annealing temperatures up to 450°C.
We have grown ∼10 nm O2 and N2O-oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800–1200 °C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O-oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000 °C. Above this temperature, N2O-oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O-oxide growth rates approach those of O2-oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000 °C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O-oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface.
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