c2D transition metal dichalcogenides (TMDCs)-based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n-MoS2/n-silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS2 grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible-near-infrared light with responsivity up to 11.9 A W(-1). Notably, the photodetector shows high-speed response time of ≈ 30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS2 , as well as in situ device fabrication process. These findings suggest that the multilayered MoS2 /Si homotype heterojunction have great potential application in the field of visible-near-infrared detection and might be used as elements for construction of high-speed integrated optoelectronic sensor circuitry.
wileyonlinelibrary.comBr, and I), have been intensively explored as promising photovoltaic materials and a respectable certified power conversion efficiency exceeding 22% has been achieved so far. [14] This great success has motivated research on perovskite QDs. [15] Among the various kinds of perovskites, all-inorganic lead halide perovskites, CsPbX 3 (X = Cl, Br, I), have demonstrated distinct photophysical properties, such as narrow emission line width, high quantum yield (QY) of luminescence, and short radiative lifetimes; they have thus been emerging as promising materials for applications like QD light-emitting diodes (LEDs), lasing and photodetectors. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] The current synthetic procedures of CsPbX 3 (X = Cl, Br, I) QDs can be mainly sorted into three routes, i.e., the direct ion reaction synthesis, anion-exchange synthesis, and the room-temperature reprecipitation. Kovalenko and co-workers pioneered the direct ion reaction synthesis of highly-luminescent CsPbX 3 (X = Cl, Br, I) nanocrystals in cubic perovskite structure using octadecene (ODE) at 140-200 °C; and through the compositional modulation and quantum size-effect, the emission could be tuned over the entire visible spectral region of 410-700 nm. [15] Following this approach, the anion-exchange method was successfully developed to prepare inorganic CsPbX 3 perovskite QDs, in which the reaction was initiated by adding another halide precursor into the parent CsPbX 3 QDs or mixing two kinds of parent QDs with different X component. [21,24] For the above two synthesis methods, CsPbX 3 QDs with good crystallinity and high yield could be obtained, but high temperature is often required to promote the reactions. At this point, room-temperature-based reprecipitation method was developed. [28,29,[33][34][35] Zeng and co-workers dissolved CsX and PbX 2 (X = Cl, Br, I) precursors in dimethylformamide (DMF) (or dimethylsulfoxide) together with oleylamine and oleic acid, then transferred the mixture to toluene, and obtained CsPbX 3 QDs at room temperature. [29] Deng and co-workers prepared the Cs-Oleate at 150 °C and by mixing the precursor with the DMF solution of PbX 2 , they synthesized various CsPbX 3 nanostructures (nanorods, nanocubes, nanoplates, and QDs) Cesium lead halide quantum dots (QDs) have tunable photoluminescence that is capable of covering the entire visible spectrum and have high quantum yields, which make them a new fluorescent materials for various applications. Here, the synthesis of CsPbX 3 (X = Cl, Br, I, or mixed Cl/Br and Br/I) QDs by direct ion reactions in ether solvents is reported, and for the first time the synergetic effects of solvent polarity and reaction temperature on the nucleation and growth of QDs are demonstrated. The use of solvent with a low polarity enables controlled growth of QDs, which facilitates the synthesis of high-quality CsPbX 3 QDs with broadly tunable luminescence, narrow emission width, and high quantum yield. A QD white LED (WLED) is demon...
A MoS2 nanopetal/GaAs homotype heterojunction with ultrafast and low noise photoresponse was solution assembled using graphene as the carrier collector.
Highly ordered MoSe 2 nanospheres are successfully fabricated via a facile colloidal route. The unique as-obtained MoSe 2 nanospheres render the high-rate transporation of sodium ion due to small size and high specific surface area. As the anode, MoSe 2 nanospheres yield the initial discharge/charge capacities of 520/430 mAh g −1 for potentials ranging from 0.1 to 3 V at a current rate of 0.1 C with an 80% capacity retention over 200 cycles. In addition, MoSe 2 nanospheres also demonstrate excellent electrochemical performance at high current densities. Using first-principles simulation, the activation barriers for sodium ion transportation on the surface as well as interlayer of the MoSe 2 are 0.344/1.31 eV respectively, suggesting that high specific surface area MoSe 2 nanospheres can serve as an attractive anode material for Na ion batteries.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.