Understanding the direct transformation from graphite to diamond has been a long-standing challenge with great scientific and practical importance. Previously proposed transformation mechanisms1–3, based on traditional experimental observations that lacked atomistic resolution, cannot account for the complex nanostructures occurring at graphite−diamond interfaces during the transformation4,5. Here we report the identification of coherent graphite−diamond interfaces, which consist of four basic structural motifs, in partially transformed graphite samples recovered from static compression, using high-angle annular dark-field scanning transmission electron microscopy. These observations provide insight into possible pathways of the transformation. Theoretical calculations confirm that transformation through these coherent interfaces is energetically favoured compared with those through other paths previously proposed1–3. The graphite-to-diamond transformation is governed by the formation of nanoscale coherent interfaces (diamond nucleation), which, under static compression, advance to consume the remaining graphite (diamond growth). These results may also shed light on transformation mechanisms of other carbon materials and boron nitride under different synthetic conditions.

Flexible and lightweight supercapacitors with superior mechanical flexibility and outstanding capacity are regarded as an ideal power source for wearable electronic devices. Meanwhile, incorporating additional novel characters such as transparency and electrochromism can further benefit the development of smart supercapacitors. Nevertheless, the application of the commonly used planar‐structural current collectors is seriously restricted by their intrinsic properties such as poor rigidity, large thickness, and limited loading surface area. Flexible and ultralight current collectors with 3D architecture, high conductivity, and easy integration are believed to be the most appropriate alternatives to build high‐performance supercapacitors. In this study, a novel and scalable manufacturing technique is developed to produce a flexible and ultralight 3D Ni micromesh (3D NM) current collector for supercapacitor. Flexible smart supercapacitor integrated by 3D NM and high active Ni–Co bimetallic hydroxide (3D NM@NiCo BH) delivers a considerable rate performance (60.6% capacity retention from 1 to 50 mA cm−2). Furthermore, the fabricated hybrid supercapacitor device integrated with electrochromic functionality can visually indicate the energy level by a color display. This flexible electrochromic supercapacitor based on ultralight 3D Ni micromesh provides a novel insight into multifunctional energy storage systems for smart wearable electronic devices.

Abstract2D material–based photodetectors have demonstrated the great potential in future optoelectric applications and the compatibility with the traditional semiconductor technology. However, low detectivity and difficulty of large‐scale fabrication still limit their application. Here, an ultrasensitive in‐plane lateral graphene–MoS2 heterostructure is successfully constructed using one‐step growth by chemical vapor deposition, which is suitable for large‐scale fabrication. The Schottky junction is formed in the channel with the edge contact of graphene and MoS2. It displays good rectification characteristics with an on/off ratio up to 106. As a photodetector, it exhibits excellent detectivity with the specific detectivity D* up to 1.4 × 1014 Jones and the responsivity of 1.1 × 105 A W−1, which benefit from strong absorption, the efficient separation of the photoexcited carriers, and quick charge transport in the Schottky junction device. Moreover, heterostructure photodetector array is demonstrated here which shows the large‐scale fabrication capacity. All of these results prove the potential of 2D material–based junction devices for optoelectronic devices.

Self‐assembled structures of 2D materials with novel physical and chemical properties, such as the good electrical and optoelectrical performance in nanoscrolls, have attracted a lot of attention. However, high photoresponse speed as well as high responsivity cannot be achieved simultaneously in the nanoscrolls. Here, a photodiode consisting of single MoS2 nanoscrolls and a p‐type WSe2 is demonstrated and shows excellent photovoltaic characteristics with a large open‐circuit voltage of 0.18 V and high current intensity. Benefiting from the heterostructure, the dark current is suppressed resulting in an increased ratio of photocurrent to dark current (two orders of magnitude higher than the single MoS2 nanoscroll device). Furthermore, it yields high responsivity of 0.3 A W−1 (corresponding high external quantum efficiency of ≈75%) and fast response time of 5 ms, simultaneously. The response speed is increased by three orders of magnitude over the single MoS2 nanoscroll device. In addition, broadband photoresponse up to near‐infrared could be achieved. This atomically thin WSe2/MoS2 nanoscroll integration not only overcomes the disadvantage of MoS2 nanoscrolls, but also demonstrates a single nanoscroll‐based heterostructure with high performance, promising its potential in the future optoelectronic applications.

Water tightly bound to the kinetic inhibitors of tetrahydrofuran hydrate is related to the hydrophobic hydration effect of the inhibitors.