There are some advantages to performing physical failure analysis from the backside as opposed to normal frontside analysis. However, there are challenges to be overcome with regard to sample preparation and scanning electron microscopy. Thus, we introduce this unusual technique to overcome the barrier of difficulty. This technique can eventually lead to the development of a versatile methodology that can be used in actual applications for failure analysis.
The ultra-high X-ray energy resolution down to 3 eV full-width at half-maximum (FWHM) of the STAR Cryoelectronics MICA-1600 Microcalorimeter (Cal) Energy Dispersive X-ray Spectrometer (EDS) [1] provides more detailed spectral information than conventional semiconductor EDS, from of peak position in the X-ray spectrum can reflect the crystal structure around the probed element or the process to make the materials. Figure 1 shows the normalized spectra for Si K (~1.740 keV) and Si K (~1.837 keV) lines of different sample states of Si. The K intensity of X-ray signal is more than 10 times the K and exhibits a more significant chemical shift.
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