Surface redox activities, oxygen evolution reaction (OER), oxidation of formic acid (FA), and anodic stability were investigated and compared for IrO 2 electrodes prepared by two techniques: the thermal decomposition of H 2 IrCl 6 precursor (TDIROF) and the anodic oxidation of metallic iridium (AIROF). Surface redox activities involved on the AIROF were found to be much faster than those involved on the TDIROF. Concerning the oxygen evolution reaction, both films show a similar mechanism and specific electrocatalytic activities. The situation seems to be different for FA oxidation. In fact, on TDIROF, the oxidation of FA and the OER compete involving the same surface redox couple Ir(VI)/Ir(IV) contrary to FA oxidation on AIROF, where the Ir(V)/Ir(IV) surface redox couple is involved. Finally, electrode stability measurements have shown that contrary to TDIROF, which are very stable under anodic polarization, the AIROF are rapidly corroded under anodic treatment. This corrosion is enhanced even further in the presence of formic acid.
Semiconductor nanowires are expected to be important components in future nano-electronics and photonics. Already a wide range of applications has been realized, such as high-performance field-effect transistors, bio/chemical sensors, diode logics and single-nanowire lasers. As nanowires have small cross-sections and large surface-to-bulk ratios, their properties can be significantly influenced by individual atomic-scale structural features, and they can have properties or even atomic arrangements with no bulk counterparts. Hence, experimental methods capable of directly addressing the atomic-scale structure of nanowires are highly desirable. One such method is scanning tunnelling microscopy (STM), which, by direct imaging of the atomic and electronic structure of surfaces has revolutionized the perception of nanoscale objects and low-dimensional systems. Here we demonstrate how combining STM with an embedding scheme allows us to image the interior of semiconductor nanowires with atomic resolution. Defect structures such as planar twin segments and single-atom impurities are imaged inside a GaAs nanowire. Further, we image an intriguing GaAs nanowire that is separated into two distinct nanocrystallites along the growth direction of the wire.
Electrolysis in aqueous 1 M HClO 4 and 1 M H 2 SO 4 solutions has been carried out under galvanostatic conditions using boron-doped diamond electrodes (BDD). Analyses of the oxidation products have shown that in 1 M HClO 4 the main reaction is oxygen evolution, while in H 2 SO 4 the main reaction is the formation of H 2 S 2 O 8. In both electrolytes small amounts of O 3 and H 2 O 2 are formed. Finally, a simplified mechanism involving hydroxyl radicals formed by water discharge has been proposed for water oxidation on boron-doped diamond anodes.
We directly image the interior of GaAs/AlGaAs axial and radial nanowire heterostructures with atomic-scale resolution using scanning tunneling microscopy. We show that formation of monolayer sharp and smooth axial interfaces are possible even by vapor-phase epitaxy. However, we also find that instability of the ternary alloys formed in the Au seed fundamentally limits axial heterostructure control, inducing large segment asymmetries. We study radial core-shell nanowires, imaging even ultrathin submonolayer shells. We demonstrate how large twinning-induced morphological defects at the wire surfaces can be removed, ensuring the formation of wires with atomically flat sides.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.