A new test structure layout technique and design methodology are used to investigate quantitatively how geometrical layout parameters such as core diameter, conductor spacing, and width would affect the performance of spiral inductors. For the 0.18-m RFCMOS technology, experimental results in this paper reveal that inductors' core diameters must be adequately large, more than 100 m, to ensure high quality factor characteristics and their conductor spacing should be minimal to obtain larger per unit area inductance value. A novel design methodology which optimizes the conductor width of inductors allows alignment of their peak quality factor to the circuit's operating frequency, enhancing the gain, input/output matching characteristics and noise figure of a giga-hertz amplifier.
This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L
GD of 20 µm achieved an off-state breakdown voltage V
BR of 1400 V and an on-state resistance R
on of 22 mΩ·cm2. This is the highest V
BR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio I
on/I
off of ∼109 and low gate leakage current I
G of ∼10-11 A/mm were also obtained.
This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest.
The differentiation of male specific sensory rays in the nematode Caenorhabditis elegans is a complex process regulated by multiple genetic components. A novel approach with heat shock treatment was employed to show that multistep regulation is involved in this process. Intervention in this stepwise regulation resulted in phenocopy of specific gene mutations. The results suggest that differential gene function acting at a precise time frame is necessary to guide the normal differentiation of sensory rays.
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