The impact ionization behavior of bulk fin field effect transistors (FinFETs) was investigated with respect to fin body width (W fin ) and bias conditions. As fin width decreases to less than about 50 nm, the effect of parasitic source/drain series resistance becomes significant, resulting in a decrease in the impact ionization rate due to the increasing voltage drop across the resistance. We analyzed the I SUB =I D trend depending on the bias conditions (V GS ¼ V DS and V GS ¼ V DS =2) for devices with a W fin thicker than 50 nm. Through two-dimensional device simulation, we showed the voltage drop and the peak electron temperature for various W fin . It was also shown that the contact resistivity between the source/drain and the metal electrode is very important in the bulk FinFET with a very thin fin width.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.