Three types of new structure a-Si solar cells having more than 9% efficiency are presented. The first one has a high optical reflection back electrode metal alloyed with optically transparent n-type μc-Si deposited on the conventional glass substrate a-SiC/a-Si heterojunction solar cell. The second type structure is an inverted p-i-n solar cell having Ag/TiO2/a-Si metal-insulator-semiconductor type back surface electrode which more efficiently collects longer wavelength photocarriers just above the band edge. The third structure demonstrated here has a-Si/polycrystalline tandem junction to pick up the energy of longer wavelength photons passing through the front side of the a-Si solar cell. All key technologies proposed here are practical and offer more promised real alternatives for the fabrication of high efficiency a-Si solar cells.
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