High concentration of Mn atoms has been successfully incorporated into the chalcopyrite type II–IV–V2 semiconductor CdGeP2 by solid-state reaction technique without causing any structural changes. Polycrystalline powder of the chalcopyrite-related material in Cd–Mn–Ge–P quaternary system has been additionally synthesized by sintering technology. Well-defined M–H hysteresis loops were observed at room temperature in CdGeP2:Mn single crystal and polycrystalline powder samples grown independently. The Curie temperature has been determined to be 320 K for single crystal phase CdxMn1−xGeP2 and 310 K for the polycrystalline powder. Magnetic force microscopy (MFM) observation clearly showed a stripe domain pattern on the Mn-diffused surface of CdGeP2 single crystal. The magneto-optical Kerr ellipticity spectrum of CdGeP2:Mn crystal showed a peak around 1.75 eV at T=300 K.
The performance of silicon (Si) solar cells is dependent on the active dopant distribution in emitters. Estimation of the dopant distribution in a Si solar cell fabricated by ion implantation is difficult due to the pyramidal surface texture of the emitter. Here, we investigate the active dopant distribution in a P-implanted Si solar cell using scanning nonlinear dielectric microscopy (SNDM). SNDM and dC/dz-SNDM are complementarily applied to visualize the carrier distribution in the cross section of the Si solar cell. The carrier density in the emitter is calibrated using the SNDM data obtained from Si standard samples. The results show that the dopant distribution can be described as the sum of two Gaussian functions distributed over the vertical direction of the pyramidal faces. The three-dimensional (3D) dopant distribution is estimated from the superposition of the P distributions at each pyramidal face. The estimated 3D dopant distribution is in good agreement with the SNDM measurement results.
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