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Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for nanoelectronic applications. Understanding dopant–defect interactions is important to form well-defined doped regions for devices. Gallium (Ga) is a key p-type dopant in Ge. In the present density functional theory study, we concentrate on the structures and electronic structures of Ga doped Ge in the presence of Ge vacancies and oxygen. We provide information on the defect structures and charge transfer between the doped Ga atom and the nearest neighbor Ge atom. The calculations show that the presence of Ga on the Ge site facilitates the formation of nearest neighbor Ge vacancies at 0.75 eV. The formation of interstitial oxygen is endoergic with the formation of −2 charge in both bulk Ge and Ga substituted Ge although the substitution of Ga has slightly less impact on the oxygen interstitial formation.
Perovskite and perovskite related oxides are important materials with applications ranging from solid oxide fuel cells, electronics, batteries and high temperature superconductors. The investigation of physical properties at the atomic scale such as self-diffusion is important to further improve and/or miniaturize electronic or energy related devices. In the present review we examine the oxygen self-diffusion and defect processes in perovskite and perovskite related oxides. This contribution is not meant to be an exhaustive review of the literature but rather aims to highlight the important mechanisms and ways to tune self-diffusion in this important class of energy materials.
Wollastonite (CaSiO3) is an important mineral that is widely used in ceramics and polymer industries. Defect energetics, diffusion of Ca ions and a solution of dopants are studied using atomistic-scale simulation based on the classical pair potentials. The energetically favourable defect process is calculated to be the Ca-Si anti-site defect cluster in which both Ca and Si swap their atomic positions simultaneously. It is calculated that the Ca ion migrates in the ab plane with an activation energy of 1.59 eV, inferring its slow diffusion. Favourable isovalent dopants on the Ca and Si sites are Sr2+ and Ge4+, respectively. Subvalent doping by Al on the Si site is a favourable process to incorporate additional Ca in the form of interstitials in CaSiO3. This engineering strategy would increase the capacity of this material.
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