Aging characteristics of BeZnSeTe yellow light emitting diodes (LEDs) fabricated on InP substrates by molecular beam epitaxy were investigated under direct current injections at room temperature. It was shown that the decay speed of the light output during the aging was slower than that of conventional ZnCdSe/MgZnSSe LEDs. A long lifetime more than 5000 h and a half lifetime of 5180 h were obtained at a current density of 130 A/cm 2 . The half lifetimes of the BeZnSeTe LEDs were about three orders of magnitude greater than that of the ZnCdSe/MgZnSSe LEDs. These results proved high reliability of the BeZnSeTe LED. Investigating the aging characteristics of the applied voltage, the injection current, and the emission spectra showed that the output decay was caused by degradation of the active layer of the LEDs.

We looked for possible mechanical damage to the gate electrodes during implantation in high-current implanter of batch type and we found that there was damage in gate electrodes with a length of 60nm to 85nm, which is caused by collision with particles. It was confirmed that the damage is dependent on spin speed, gate direction and existence of photo resist.

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