Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. In this work, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ∼15 nm thick ultraporous (pore size ∼5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al2O3 system, that the ultraporous films result in ultrahigh on/off ratio (>109) at ultralow switching voltages (∼±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 104 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.

A magneto-structural phase transition is investigated in single crystal CrN thin films grown by rf plasma molecular beam epitaxy on MgO(001) substrates. While still within the vacuum environment following MBE growth, in-situ low-temperature scanning tunneling microscopy, and in-situ variable low-temperature reflection high energy electron diffraction are applied, revealing an atomically smooth and metallic CrN (001) we also discuss results from first-principles theoretical calculations which explore various possible magneto-structural models.

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