A full study of the electronic structure of 4d and 5d silicides (RuSi, RhSi, PdSi, OsSi, IrSi, , PtSi) is undertaken including XPS VB and XES ( and ) measurements and LMTO band structure calculations. It is found that d bands which dominate the density of states are more localized with increasing atomic number Z of the transition metal. A strong hybridization between silicon 3p and transition metal d states occurs over the entire valence band. Si 3s states are found to be not mixed with Si 3p and nd states but Si 3d states participate in bonding and hybridize with transition metal d states. The non-bonding character of the majority of nd states is not confirmed for 4d and 5d silicides.
High energy resolved x-ray emission spectroscopy with variable electron beam excitation is applied for study of solid-phase reactions in the Ir/(111)Si system as a function of annealing temperature. The formation of Ir silicides as a function of depth is studied by measurements of Si L2,3 x-ray emission valence spectra at different electron excitation energies (3–10 keV), and the results are compared with those of Rutherford backscattering.
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