The barrier heights φB of Au/n-InxGa1−xAs diodes are measured by the capacitance-voltage and saturation current methods. The composition dependence of the barrier height is φB (eV) = 0.95 − 1.90x + 0.90x2. A low barrier height with a relatively wide band gap is obtained in this system.
Three-dimensional photonic crystals with periodic variations in the dielectric constant were fabricated using a stereolithographic rapid prototyping method. The structures were composed of millimeter-scale ordered epoxy lattices in which ceramic particles with high dielectric constants (such as silica and titania) were dispersed. These crystals were designed to reflect microwaves via the formation of photonic band gaps in a gigahertz range. The attenuation of transmission amplitude through the photonic crystals, which was measured as a function of frequency using a network analyzer, clearly showed the formation of band gaps in the microwave range.
Acceptor concentration dependence of the gain-spectrum peak was measured in coumarin 30 (donor) and rhodamine 6G (acceptor) mixtures. Change of the gain spectrum due to the energy-transfer reaction is attributed to the change of the effective fluorescence lifetime. From the concentration dependence of the effective fluorescence lifetime, rate constants were obtained as follows: kda (for resonance energy transfer) =4×10−11 cm3/sec and k′da (for radiative energy transfer) =2×10−9 cm3/sec. Consequently, the radiative energy transfer was the most dominant mechanism in the energy-transfer reaction.
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