We have used gated GaAs/AlGaAs heterostructures to explore nonlinear transport between spin-resolved Landau level (LL) edge states over a submicron region of two-dimensional electron gas (2DEG). The current I flowing from one edge state to the other as a function of the voltage V between them shows diode-like behavior-a rapid increase in I above a well-defined threshold Vt under forward bias, and a slower increase in I under reverse bias. In these measurements, a pronounced influence of a current-induced nuclear spin polarization on the spin splitting is observed, and supported by a series of NMR experiments. We conclude that the hyperfine interaction plays an important role in determining the electronic properties at the edge of a 2DEG.
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