Methylammonium lead halide (
M
A
P
b
I
3
) is widely used as perovskite absorber material in thin-film solar cell technology because of its eminent cell performance. Recently, formamidinium lead iodide perovskite (
F
A
P
b
I
3
) has received great attention because of its optimum bandgap value closer to the infrared single junction range. In this paper, a suitable combination of hole transporting material (HTM) and electron transporting material (ETM) is determined to achieve higher efficiency compared to existing structures utilizing an
F
A
P
b
I
3
absorber. The proposed structure uses two stable metal oxides as HTM (
N
i
O
X
) and ETM (
S
n
O
2
). A comparative numerical analysis of solar cell performance is shown among four different HTM materials using the Solar Cell Capacitor Simulator (SCAPS-1D). Performance evaluation is also carried out for three different compositions of
F
A
P
b
I
3
having different band gaps with respect to absorber thickness. Optimized absorber thickness, HTM and ETM doping density, and absorber defect density are enumerated using numerical simulation. By deploying the optimized parameters, maximum power conversion efficiency is found to be 26.23%. Later on, effects of
R
s
e
r
i
e
s
and
R
s
h
u
n
t
on ideal solar cell performance are analyzed using numerical simulation.
A thermal imaging array can be a convenient tool for health monitoring and security applications. In this work, a two-dimensional wearable thermal imaging sensor array design comprised of the carbon nanotube (CNT) harnessing thermoelectric effect is proposed. The proposed sensor device was constructed of an array of p-type CNT fibers that are woven across another array of n-type CNT fibers in the similar manner fibers that are woven in textile fabric. Electromagnetic (EM) wave emitted from the subject of detection increases the temperature of certain array nodes of the sensor device, which causes voltage differences between different p–n fiber junctions. Mapping the voltages of all the p–n junctions, thermal images of the subject can be obtained. Though there is a trade-off between responsivity and detection resolution, our proposed sensor can provide a responsivity of 57 V/W for a nanowatt range EM power source with submicrometer level detection resolution according to our calculation. Moreover, we theoretically investigated the effect of the junction distance in the sensor and the size of the hotspot on the resultant thermoelectric voltage.
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