Herein, we propose a simple but powerful technique for
investigating
the correlations between the dynamics of charge carriers and excitons.
This technique (DCM-PL) is based on displacement current measurement
(DCM) with simultaneous observation of the photoluminescence (PL)
intensity. By applying this technique to metal–insulator–semiconductor
(MIS) devices incorporating a partial stack of a tris(2-phenylpyridine)iridium(III)
[Ir(ppy)3]-based organic light-emitting diode (OLED), we
are able to investigate the hole accumulation behavior and the corresponding
PL losses due to exciton-polaron quenching (EPQ). Remarkably, the
DCM-PL characteristics revealed that the polarity of the host material
in the emission layer modifies the charge-carrier dynamics and EPQ
properties. Our results contribute to the optimization of OLED device
performance, since EPQ is a key process involved in efficiency roll-off
and device degradation.
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