The DC glow discharge of nitrogen gas was carried out by 5 kV DC power supply, which was used to bias voltage between two parallel plate electrodes in the cylindrical glass tube chamber. The distance between two parallel plate electrodes was about 37.5 cm. The voltage was applied on these electrodes between 800 V to 1400 V. The nitrogen pressure in the cylindrical glass tube chamber was controlled by rotary pump and vacuum value. Optical Emission Spectroscopy (OES) was used to investigate the local emissivity of nitrogen glow discharge in the range between 200 and 1,100 nm. The spatial distribution of reactive species was measured at different nitrogen pressures from 0.15-1.90 mbar. These measurements were obtained to analyze the electron temperature. The effect of different nitrogen pressures was studied on the electron temperature and the configuration of nitrogen plasma. In the result, it was found that the plasma column increased with increasing the nitrogen pressure. The electron temperature was less than 0.8 eV.
Deposition of aluminum and zinc targets was carried out by DC magnetron sputtering to produce aluminum doped zinc oxide (AZO) thin films. These films were deposited on quartz, glass and silicon substrates under 5.5x10-3 mbar pressure. At a ratio of argon gas to oxygen gas (Ar:O2) of 5:10 and a voltage at zinc target of260 V, AZO thin films were deposited at different currents at aluminum target such as 900, 1,000, 1,100 and 1,200 mA. Effect of current at aluminum target on the structural, optical and electrical properties of resulting films was studied. Structural characterization by X-ray diffraction (XRD) technique and Energy Dispersive X-Ray Spectroscopy (EDS) confirmed incorporation of aluminum in ZnO lattice. The thickness measurement by Scanning Electron Microscope (SEM) showed that the thickness of AZO thin films is in the range of 270–350 nm. An average transmittance of above 80% in the visible wavelength region was obtained for aluminum doped zinc oxide. The optical direct bandgap and the resistivity of AZO thin films were found in the range 3.3-3.5eV and 6.0x10-1-9.0x10-1 Ωcm; respectively.
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