The authors report the enhancement of the bandgap emission from ZnO thin films by surface modification and surface plasmon cross-coupling. 12-fold and twofold enhancements of bandgap emission from the metal side of ZnO film were observed by sputtering Pt nanopattern and Pt film onto ZnO film, respectively. Time-resolved photoluminescence indicates that the decay time is slowed down by Pt capping, contrary to common observations. The "abnormal" phenomena are interpreted by considering both the surface modification and surface plasmon coupling.
We investigate the photoconductivity properties of ZnO thin films prepared by pulsed laser deposition with and without metals ͑Au or Pt͒ on the surface. The covering of nanostructured metals can largely enhance the photocurrent. Meanwhile, the dark currents have been increased significantly due to the increase in carrier concentration and mobility near the surface of ZnO thin film. Although plasmonic effect was observed by the photoluminescence enhancement, the main mechanism of the increase in the dark current and photoresponsivity for ZnO photoconductors has been interpreted by surface states, interface states, and persistent photoconductivity.
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