The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm−3 eV−1 has been deduced from the current-voltage-temperature data.
This paper addresses issues related to migration and acceptor neutralization of hydrogen (H) in crystalline Si. From spreading resistance measurements, it is shown that disordered regions, both surface and subsurface, directly inhibit the penetration of H. Further, these effects are shown to be independent of the kind of disorder and the method of hydrogenation. Secondary-ion mass spectrometry profiles of deuterated samples confirm the suppression of deuterium movement through the disordered regions. We observe that annealing of these hydrogenated damage regions results in generation of an acceptor deactivation profile which is persistent for temperatures up to 800 °C and durations up to 1 min. This sustained deactivation phenomenon results in up to four decade change in free-carrier concentration. Our results unequivocally suggests that H-soaked damage region acts as a source of atomic hydrogen under rapid thermal annealing.
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