Buried channel waveguides were fabricated in E?+-Yb3+ co-doped phosphate glasses using focused oroton beam irradiation. Net gain of the waveguide amplifiers at 1 . 5 3 4~ wavelength was --l.3&/& with 9OmW pump power.Erbium-Doped Waveguide Amplifiers (EDWAS) have attracted much attention recently for system employment in the 1 . 5~ wavelength region, because of the potential for integration with pump lasers and other waveguide devices. The most common waveguide fabrication technique used is the ion-exchange process [l]. Ion beam irradiation method has also been extensively used to fabricate planar waveguides. The irradiation method uses various types of particles, such as protons, helium and other ions, and changes the density and hence the refkctive index of the material. Recent research on channel waveguide fabrication using focused high energy proo" beam is mainly restricted to passive materials, such as fused silica and polymethylmethacrylate (PMMA) [2,3]. In this work we demonstrate, for the first time, the use of focused proton @I+) beam to direct write buried channel waveguides in E?-, ' +-doped phosphate glasses. The ion dosage used is in the range 1014-1015 ions/cmz. The photoluminescence properties and the optical gain of the waveguide amplifiers were measured. The substrates used were phosphate glasses co-doped with 2.2 wt?? ErzOl and 4.7 wto/o Ybz03. The proton beam writing was canied out using the High Voltage Engineering Europa 3.5 MeV Singletronm accelerator at the Centre for Ion Beam Applications, National University of Singapore [4,5].A 2.0MeV proton beam with ion dosage in the range 10'4-10'5 ions/cm* and a focused spot size of -1 pm were used to produce the direct-write buried waveguides.Irradiation with ions leads to the breaking of P-0 bonds in the nuclear damage region in the phosphate glasses. This produces further amorphization, and the density and the refractive index are increased at the end of the ion penetration. Fig.1 shows the Transport and Range of Ions in Matter (TRIM) simulations of the oxygen and phosphoms vacancies as a function of penetration depth formed in the glasses using 2.OMeV proton beam irradiation. ' 1.0 0.5 0 5 10 15 20 25 30 35 40 Depth (w) Fig. 1 Distribution of oxygen and phospbom vacancies in phosphate glasses as a h c t i o n of penetration depth using TRIM simulation. The proton energy used is 2.OMeV.The protons are estimated to penetrate a depth of 3 8 . 7~ below the substrate surface [6]. The waveguides were measured experimentally to be located at a distance of -38pm below the surface, and this is in excellent agreement with the TRIM simulation results. After irradiation, the waveguides were annealed at a temperature from 150°C to 400°C for 3 h i n to reduce the 0-7803-7888-1/03/$17.00@!2W3 IEEE 132
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