We have developed a low-temperature plasma-enhanced chemical vapor deposition process that facilitates the deposition of silicon nitride films with controlled stress by using periodically alternating high-and low-frequency power sources. Very thick films of 3 m with low stress were deposited on InP substrates. Suitable sidewall profiles for metallization are obtained at 250°C deposition temperature. A 3-m-thick low-stress nitride film was successfully applied to reduce the capacitance of bond pad for an array of four InP based photodetectors, that were integrated with a four channel phased-array wavelength demultiplexer. The capacitance of the detectors was below 0.5 pF at Ϫ5 V bias.
A new class of nonlinear optical side chain polymers based on modified polyimide backbones1 has been developed for the use as electro-optic modulator devices. The nonlinear optical polymers with functionalised azo-dye chromophores show high glass transition temperatures in the range of 137°C to 172°C, resulting in excellent long-term stability of the electro-optic effect.2 Coefficients of r33 = 20 pm/V have been measured at 1313 nm and first prototype electro-optic modulators could be demonstrated.
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