CF 3 I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF 4 , C 4 F 8 or CF 3 H has been made to illustrate the performances of this low environmental impact chemistry.
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