Lithium niobate is a promising platform for integrated quantum optics. In this platform we aim to efficiently manipulate and detect quantum states by combining superconducting single photon detectors and modulators. The cryogenic operation of a superconducting single photon detector dictates the optimisation of the electro-optic modulators under the same operating conditions. To that end, we characterise a phase modulator, directional coupler, and polarisation converter at both ambient and cryogenic temperatures. The operation voltage Vπ/2 of these modulators increases due to the decrease of the electro-optic effect by 74% for the phase modulator, 84% for the directional coupler and 35% for the polarisation converter below 8.5 K. The phase modulator preserves its broadband nature and modulates light in the characterised wavelength range. The unbiased bar state of the directional coupler changed by a wavelength shift of 85 nm while cooling the device down to 5 K. The polarisation converter uses periodic poling to phasematch the two orthogonal polarisations. The phasematched wavelength of the used poling changes by 112 nm when cooling to 5 K.

In recent years, Raman spectroscopy has been used to visualize and analyze ferroelectric domain structures. The technique makes use of the fact that the intensity or frequency of certain phonons is strongly influenced by the presence of domain walls. Although the method is used frequently, the underlying mechanism responsible for the changes in the spectra is not fully understood. This inhibits deeper analysis of domain structures based on this method. Two different models have been proposed. However, neither model completely explains all observations. In this work, we have systematically investigated domain walls in different scattering geometries with Raman spectroscopy in the common ferroelectric materials used in integrated optics, i.e., KTiOPO 4 , LiNbO 3 , and LiTaO 3. Based on the two models, we can demonstrate that the observed contrast for domain walls is in fact based on two different effects. We can identify on the one hand microscopic changes at the domain wall, e.g., strain and electric fields, and on the other hand a macroscopic change of selection rules at the domain wall. While the macroscopic relaxation of selection rules can be explained by the directional dispersion of the phonons in agreement with previous propositions, the microscopic changes can be explained qualitatively in terms of a simplified atomistic model.

Integrated χ(2) devices are a widespread tool for the generation and manipulation of light fields, since they exhibit high efficiency, a small footprint and the ability to interface them with fibre networks. Surprisingly, some commonly used material substrates are not yet fully understood, in particular potassium titanyl phosphate (KTP). A thorough understanding of the fabrication process of waveguides in this material and analysis of their properties is crucial for the realization and the engineering of high efficiency devices for quantum applications. In this paper we present our studies on rubidium-exchanged waveguides fabricated in KTP. Employing energy dispersive X-ray spectroscopy (EDX), we analysed a set of waveguides fabricated with different production parameters in terms of time and temperature. We find that the waveguide depth is dependent on their widths by reconstructing the waveguide depth profiles. Narrower waveguides are deeper, contrary to the theoretical model usually employed. Moreover, we found that the variation of the penetration depth with the waveguide width is stronger at higher temperatures and times. We attribute this behaviour to stress-induced variation in the diffusion process.

Advanced electro-optic processing combines electrical control with optical modulation and detection. For quantum photonic applications these processes must be carried out at the single photon level with high efficiency and low noise. Integrated quantum photonics has made great strides achieving single photon manipulation by combining key components on integrated chips which are operated by external driving electronics. Nevertheless, electrical interconnects between driving electronics and the electro-optic components, some of which require cryogenic operating conditions, can introduce parasitic effects. Here we show an all-optical interface which simultaneously delivers the operation power to, and extracts the measurement signal from, an advanced photonic circuit, namely, bias and readout of a superconducting nanowire single photon detector (SNSPD) on a single stage in a 1K cryostat. To do so, we supply all power for the single photon detector, output signal conditioning, and electro-optic readout using optical interconnects alone, thereby fully decoupling the cryogenic circuitry from the external environment. This removes the need to heatsink electrical connections, and potentially offers low-loss, high-bandwidth signal processing. This method opens the possibility to operate other advanced electrically decoupled photonic circuits such as optical control and readout of superconducting circuits, and feedforward for photonic quantum computing.

Lithium niobate is a promising platform for integrated quantum optics. In this platform we aim to efficiently manipulate and detect quantum states by combining superconducting single photon detectors and modulators. The cryogenic operation of a superconducting single photon detector dictates the optimisation of the electrooptic modulators under the same operating conditions. To that end, we characterise a phase modulator, directional coupler, and polarisation converter at both ambient and cryogenic temperatures. The operation voltage V π/2 of these modulators increases due to the decrease of the electro-optic effect by 74% for the phase modulator, 84% for the directional coupler and 35% for the polarisation converter below 8.5 K. The phase modulator preserves its broadband nature and modulates light in the characterised wavelength range. The unbiased bar state of the directional coupler changed by a wavelength shift of 85 nm while cooling the device down to 5 K. The polarisation converter uses periodic poling to phasematch the two orthogonal polarisations. The phasematched wavelength of the used poling changes by 112 nm when cooling to 5 K.