Tensile strained single-crystal GeSn on insulator (GSOI) was obtained using self-organized seeding lateral growth. Segregation of Sn atoms and Sn distribution occurred during the lateral growth of the GeSn stripe. At both edges of the GSOI, Sn concentration distribution was found in good agreement with calculation based on the Scheil equation. P-channel metal–oxide–semiconductor field effect transistors were fabricated using the GSOI materials. Good transistor performance with the low field peak hole mobility of 383 cm2 V−1 s−1 was obtained, which indicated the high quality of this GSOI structure.
Room temperature photoluminescence (PL) was observed along 50 μm long Ge strips on insulator on bulk Si substrates fabricated by rapid melt growth. The PL peaks evidently exhibited a redshift from the origin to the end of the Ge strip because of the shrinkage of the direct bandgap of Ge. Moreover, PL intensities increased along the direction of lateral epitaxial growth primarily because of the decrease in the energy difference between the direct and indirect gaps of Ge. The change in the Ge band structure, which facilitated changes in PL peaks and intensities, was found to have resulted from the variation of tensile strain ratios and Si fractions along Ge strips. Furthermore, the PL intensity at the end of the strip was one magnitude higher than that of bulk Ge, which indicates the high quality of Ge-on-insulator structures.
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