Capital to topological insulators, the bulk-boundary correspondence ties a topological invariant computed from the bulk (extended) states with those at the boundary, which are hence robust to disorder. Here we put forward an ordering unique to non-Hermitian lattices, whereby a pristine system becomes devoid of extended states, a property which turns out to be robust to disorder. This is enabled by a peculiar type of non-Hermitian degeneracy where a macroscopic fraction of the states coalesce at a single point with geometrical multiplicity of 1, that we call a phenomenal point.

Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. Unfortunately, CVD graphene is intrinsically polycrystalline, with pristine graphene grains stitched together by disordered grain boundaries, which can be either a blessing or a curse. On the one hand, grain boundaries are expected to degrade the electrical and mechanical properties of polycrystalline graphene, rendering the material undesirable for many applications. On the other hand, they exhibit an increased chemical reactivity, suggesting their potential application to sensing or as templates for synthesis of one-dimensional materials. Therefore, it is important to gain a deeper understanding of the structure and properties of graphene grain boundaries. Here, we review experimental progress on identification and electrical and chemical characterization of graphene grain boundaries. We use numerical simulations and transport measurements to demonstrate that electrical properties and chemical modification of graphene grain boundaries are strongly correlated. This not only provides guidelines for the improvement of graphene devices, but also opens a new research area of engineering graphene grain boundaries for highly sensitive electro-biochemical devices.

Recently, the search for topological states of matter has turned to non-Hermitian systems, which exhibit a rich variety of unique properties without Hermitian counterparts. Lattices modeled through non-Hermitian Hamiltonians appear in the context of photonic systems, where one needs to account for gain and loss, circuits of resonators, and also when modeling the lifetime due to interactions in condensed matter systems. Here we provide a brief overview of this rapidly growing subject, the search for topological states and a bulk-boundary correspondence in non-Hermitian systems.

Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue.

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