Large-area gallium nitride (GaN) micro- and nanopillar (NP) arrays were fabricated by plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep-ultraviolet lithography, inductively coupled plasma (ICP) etching, and subsequent chemical treatments were effectively utilized to fabricate GaN pillars with diameters ranging from 250 nm to 10 μm. The impact of various plasma etching process parameters and chemical etchants on the morphology, strain, and surface defects of these NPs were studied using scanning-electron microscopy, photoluminescence (PL), and Raman spectroscopy. It was found that the shape of the NPs can be controlled by the substrate temperature during the plasma etch and by using different gas chemistries. Room-temperature PL and Raman spectroscopy measurements revealed significant strain relaxation in 250 nm diameter pillars as compared to 10 μm diameter pillars. PL measurement also indicated that the surface damage from the plasma etch can be removed by etching in KOH-ethylene glycol solution. Post-ICP selective wet chemical etch enabled us to fabricate functional structures such as micro- and nanodisks of GaN, which potentially could be utilized in nitride-based resonators and lasers.
Titanium dioxide (TiO(2)) is one of the most widely studied and important materials for catalysis, photovoltaics, and surface science applications, but the ability to consistently control the relative exposure of higher surface energy facets during synthesis remains challenging. Here, we present the repeatable synthesis of highly reactive, rutile {001} or {101} facets on broad, sword-shaped TiO(2) nanostructures rapidly synthesized in minutes. Growth occurs along planes of lower surface energy, repeatedly yielding nanostructures with large, high energy facets. The quantitative photocatalytic reactivity of the nanoswords, demonstrated by the photoreduction of silver, is over an order of magnitude higher than reference low energy TiO(2){110} substrates. Therefore, the higher surface energy dominated TiO(2) nanoswords are ideal structures for characterizing the physicochemical properties of rutile TiO(2), and may be used to enhance a variety of catalytic, optical, and clean-technology applications.
Single-crystalline rutile TiO2 nanowires (NWs) were synthesized by the vapor–liquid–solid (VLS) method on Ti foil substrates patterned with catalytic Sn nano-islands. NWs of 3 to 8 µm in length and 50 to 500 nm in diameter were grown along the [110] axis exhibiting a rectangular cross section with the (001) and (110) side facets. This facile approach to TiO2 NW fabrication with fast induction heating and short processing time utilizes the Ti foil both as a substrate and as a metal supply, thus eliminating the need for a separate titanium source.
We present large-area, vertically aligned GaN n-core and p-shell structures on silicon substrates. The GaN pillars were formed by inductively coupled plasma etching of lithographically patterned n-GaN epitaxial layer. Mg-doped p-GaN shells were formed using selective overgrowth by halide vapor phase epitaxy. The diameter of the cores ranged from 250 nm to 10 lm with varying pitch. The p-shells formed truncated hexagonal pyramids with {1 101} side-facets. Room-temperature photoluminescence and Raman scattering measurements indicate strain-relaxation in the etched pillars and shells. Cross-sectional transmission electron microscopy revealed dislocation bending by 90 at the core-shell interface and reduction in their density in the shells. V
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.