Dual-mode photodetectors (PDs) have attracted increasing interest owing to their potential optoelectrical applications. However, the widespread use of PDs is still limited by the high cost of epitaxial semiconductors. In contrast, the solution processability and wide spectral tunability of perovskites have led to the development of various inexpensive and highperformance optoelectronic devices. In this study, we develop a high-performance electronically modulated dual-mode PD with near-infrared (NIR) narrowband and visible light broadband detection based on organic−inorganic hybrid methylammonium lead halide perovskite (MAPbX 3 ; MA = CH 3 NH 3 and X = Cl, Br, and I) single crystals with a pnp configuration. The operating mode of the dual-mode PD can be switched according to voltage bias polarity because the photon absorption region and carrier transport performance are tuned at different bias voltages. The dual-mode PD exhibits a NIR light responsivity of 0.244 A/W and a narrow full width at half-maximum of ∼12 nm at 820 nm at positive voltages and an average visible light responsivity of ∼0.13 A/W at negative voltages. The detectivities of both modes are high (∼10 12 Jones), and the linear dynamic range is wide (>100 dB). Our study provides a new method for fabricating multifunctional PDs and can expand their application in integrated imaging systems.
Perovskites single crystals (PSCs) could be used to made high performance photoelectric detectors due to its superior optoelectronic characteristics. Generally, external electric field need to be applied in the PSCs-based...
Organic-inorganic hybrid methylammonium lead halide perovskite MAPbX3 (where MA = CH3NH3, and X = Cl, Br, I) single crystals are potential semiconductors for photo-detection due to their excellent optoelectronic performance. In particular, MAPbCl3 single crystal is a wide-band-gap (2.9 eV) semiconductor which is suitable for ultraviolet (UV) detection. In this work, n−-n+ photo-diodes are fabricated through solution-processed epitaxial growth, growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate. The epitaxial layer effectively improves the interface between n−-type and n+-type layers and leads to low dark current. This work provides useful information for UV detection based on perovskites.
Recent years, organic-inorganic hybrid perovskites (OIHPs) have been widely used in applications, such as solar cells, lasers, light-emission diodes, and photodetectors due to their outstanding optoelectronic properties. Nowadays photodetectors based on perovskite films (PFs) suffer from surface and interface traps, which result from low crystalline quality of perovskite films and lattice mismatch between perovskite films and substrates. Herein, we fabricate MAPbI3 -(MA = CH3NH3) single-crystal films (SCFs) on MAPbBr3 single crystal substrates in MAPbI3 precursor solution during crystallization process via solution-processed epitaxy. Benefit from the good lattice matching, epitaxial MAPbI3 SCFs with high crystallinity and smooth morphology are of comparable quality to MAPbI3 PSCs and are of better quality than MAPbI3 polycrystalline films. Here we report that epitaxial MAPbI3 SCFs have a low trap density of 5.64×1011 cm–3 and a long carrier lifetime of 11.86 μs. In this work, photodetector based on epitaxial MAPbI3 single-crystal film (SCF) exhibits an excellent stability of a long-term stable response after 120 days, a fast response time of 2.21 μs, a high responsivity of 1.2 A W–1 and a high detectivity of 3.07 ×1012 jones.
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