The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The study of nodal-line semimetal is still at initial stage; only three material systems have been verified to host nodal line fermions until now, including PbTaSe2 [1], PtSn4 [2]and ZrSiS [3]. In this letter, we report evidence of nodal line fermions in ZrSiSe and ZrSiTe probed in de Haas-van Alphen (dHvA) quantum oscillations. Although ZrSiSe and ZrSiTe share similar layered structure with ZrSiS, our measurements of angular dependences of dHvA oscillations indicate the Fermi surface (FS) enclosing Dirac nodal line is of 2D character in ZiSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal line fermion density in ZrSi(S/Se) (~ 10 20 -10 21 cm -3 ) is much higher than the Dirac/Weyl fermion density of any known topological materials. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin

Neutron scattering is used to probe magnetic excitations in FeSe_{0.4}Te_{0.6} (T_{c} = 14 K). Low energy spin fluctuations are found with a characteristic wave vector (1/21/2L) that corresponds to Fermi surface nesting and differs from Q_{m} = (delta01/2) for magnetic ordering in Fe_{1+y}Te. A spin resonance with variant Planck's over 2piOmega_{0} = 6.51(4) meV approximately 5.3k_{B}T_{c} and variant Planck's over 2piGamma = 1.25(5) meV develops in the superconducting state from a normal state continuum. We show that the resonance is consistent with a bound state associated with s_{+/-} superconductivity and imperfect quasi-2D Fermi surface nesting.

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metalinsulator transition, and mobility up to 4000 cm 2 /Vs. At low temperatures, we observe gatetunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 m e as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications. *

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néeltype skyrmions are induced at the WTe 2 /Fe 3 GeTe 2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ m −2. This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.

MnBi2Te4 has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We performed comprehensive studies on the structure, nontrivial surface state and magnetotransport properties of this material. Our results reveal an intrinsic anomalous Hall effect arising from a non-collinear spin structure for the magnetic field parallel to the c-axis. We also observed remarkable negative magnetoresistance under arbitrary field orientation below and above the Neel temperature (TN), providing clear evidence for strong spin fluctuation-driven spin scattering in both the AFM and paramagnetic states. Further, we found that the nontrivial surface state opens a large gap (~85 meV) even at temperatures far above TN = 25K. These findings demonstrate that the bulk band structure of MnBi2Te4 is strongly coupled to the magnetic structure and that a net Berry curvature in momentum space can be created in a canted AFM state. In