With recent developments in power conversion technologies and market trends that are driving those technologies toward further miniaturization and greater integration, the need for an empirically based modeling methodology for proprietary power converters such as Power Supply on Chip (PwrSoC) products has risen significantly. This need motivates the investigation of black-box models, which require little or no knowledge of the internal workings of a system, for those areas of industry adopting PwrSoC technology as a point-of-load solution. This paper reports a black-box modeling method and the construction and validation of a largesignal averaged model for a specific commercially available PwrSoC product. The benefits of the approach reported in this paper include the computational advantages of averaged models in simulation and the availability of a simple procedure to create models for concept analysis and design evaluation of PwrSoC products without vendor supplied models or "white-box" information needed to create a circuit description of the part.
In Electrified Vehicles, the cost, efficiency, and durability of electrified vehicles are dependent on the energy storage system (ESS) components, configuration and its performance. This paper, pursuing a minimal size tactic, describes a methodology for quantitatively and qualitatively investigating the impacts of a full bandwidth load on the ESS in the HEV. However, the methodology can be extended to other electrified vehicles. The full bandwidth load, up to the operating frequency of the electric motor drive (20 kHz), is empirically measured which includes a frequency range beyond the usually covered frequency range by published standard drive cycles (up to 0.5 Hz). The higher frequency band is shown to be more efficiently covered by a Hybrid Energy Storage System (HESS) which in this paper is defined as combination of a high energy density battery, an Ultra-Capacitor (UC), an electrolytic capacitor, and a film capacitor. In this paper, the harmonic and dc currents and voltages are measured through two precision methods and then the results are used to discuss about overall HEV efficiency and durability. More importantly, the impact of the addition of high-band energy storage devices in reduction of power loss during transient events is disclosed through precision measurement based methodology.
This is the first high-temperature static and dynamic characterization of a half-bridge power module using 1200 V, 45 mΩ depletion-mode vertical JFETs. With only 36 mm2 of JFET area, the peak pulsed current is measured to be nearly 500 A at room temperature (transistors not saturated), decreasing to 230 A at 250 °C (transistors saturated). Total switching losses are less than 3.2 mJ from 25 °C to 250 °C and show negligible dependence on junction temperature. The achievement of this level of performance with such a small SiC transistor area is important, since die area directly impacts achievable module footprint (system-level power density and cost), device capacitance (switching losses), and semiconductor cost.
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