We have developed and implemented a selfconsistent density functional method using standard norm-conserving pseudopotentials and a flexible, numerical linear combination of atomic orbitals basis set, which includes multiple-zeta and polarization orbitals. Exchange and correlation are treated with the local spin density or generalized gradient approximations. The basis functions and the electron density are projected on a real-space grid, in order to calculate the Hartree and exchange-correlation potentials and matrix elements, with a number of operations that scales linearly with the size of the system. We use a modified energy functional, whose minimization produces orthogonal wavefunctions and the same energy and density as the Kohn-Sham energy functional, without the need for an explicit orthogonalization. Additionally, using localized Wannier-like electron wavefunctions allows the computation time and memory required to minimize the energy to also scale linearly with the size of the system. Forces and stresses are also calculated efficiently and accurately, thus allowing structural relaxation and molecular dynamics simulations.

The integration of ferroelectric oxide films into microelectronic devices, combined with the size reduction constraints imposed by the semiconductor industry, have revived interest in the old question concerning the possible existence of a critical thickness for ferroelectricity. Current experimental techniques have allowed the detection of ferroelectricity in perovskite films down to a thickness of 40 A (ten unit cells), ref. 3. Recent atomistic simulations have confirmed the possibility of retaining the ferroelectric ground state at ultralow thicknesses, and suggest the absence of a critical size. Here we report first-principles calculations on a realistic ferroelectric-electrode interface. We show that, contrary to current thought, BaTiO3 thin films between two metallic SrRuO3 electrodes in short circuit lose their ferroelectric properties below a critical thickness of about six unit cells (approximately 24 A). A depolarizing electrostatic field, caused by dipoles at the ferroelectric-metal interfaces, is the reason for the disappearance of the ferroelectric instability. Our results suggest the existence of a lower limit for the thickness of useful ferroelectric layers in electronic devices.

The performance of basis sets made of numerical atomic orbitals is explored in density-functional calculations of solids and molecules. With the aim of optimizing basis quality while maintaining strict localization of the orbitals, as needed for linear-scaling calculations, several schemes have been tried. The best performance is obtained for the basis sets generated according to a new scheme presented here, a flexibilization of previous proposals. The basis sets are tested versus converged plane-wave calculations on a significant variety of systems, including covalent, ionic and metallic. Satisfactory convergence (deviations significantly smaller than the accuracy of the underlying theory) is obtained for reasonably small basis sizes, with a clear improvement over previous schemes. The transferability of the obtained basis sets is tested in several cases and it is found to be satisfactory as well.

Recent developments in and around the SIESTA method of first-principles simulation of condensed matter are described and reviewed, with emphasis on (i) the applicability of the method for large and varied systems, (ii) efficient basis sets for the standards of accuracy of density-functional methods, (iii) new implementations, and (iv) extensions beyond ground-state calculations.