The authors conducted 3 sets of experiments. In the 1st set of experiments, participants made alphabetic position estimations. In the 2nd set, participants made interletter distance estimations. In the 3rd set, they made comparative judgments of the alphabetic order of a pair of letters. The results showed that participants had highly accurate ordinal level information about the alphabet in memory but that interval level information was systematically distorted. In addition, alphabetic serial information was found to be used in 2 distinct modes in memory, depending on whether the representation could be contained within the span of immediate memory.

Three recognition memory experiments were conducted using modified Deese-RoedigerMcDermott (DRM) and DRM paradigms. In Experiment 1, the reaction time (RT) of the false alarms to critical nonpresented words 1 (false memory) was compared with the RT of hits to the critical presented words and with the RT of hits to the studied list words (true memory). The RT of the false alarms to the critical nonpresented words was significantly longer than that of the hits to the critical words and than that of the studied list words. In Experiment 2, in addition to RT, participants' confidence level was measured on a 4-point scale for a yes or no response. Confidence rating was significantly higher for the hits to the critical presented words and to the list words than for the false alarms to the critical nonpresented words. Experiment 3 further showed that how similar false memory experience was to that of true memory was a function of retention size (number of lists of words retained in memory). In all three experiments, the participants' recognition RTs distinguished false memory from veridical memory, and in Experiments 2 and 3, so did their confidence ratings. Therefore, false memory and veridical memory differ at both the objective and the subjective levels. The results are consistent with a single familiarity dimension model of recognition memory.

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