Platinum ditelluride (PtTe2) is an emerging semimetallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) crystal with intriguing band structures and unusual topological properties. Despite much devoted efforts, scalable and controllable synthesis of large-area 2D PtTe2 with well-defined layer orientation has not been established, leaving its projected structure–property relationship largely unclarified. Herein, we report a scalable low-temperature growth of 2D PtTe2 layers on an area greater than a few square centimeters by reacting Pt thin films of controlled thickness with vaporized tellurium at 400 °C. We systematically investigated their thickness-dependent 2D layer orientation as well as its correlated electrical conductivity and surface property. We unveil that 2D PtTe2 layers undergo three distinct growth mode transitions, i.e., horizontally aligned holey layers, continuous layer-by-layer lateral growth, and horizontal-to-vertical layer transition. This growth transition is a consequence of competing thermodynamic and kinetic factors dictated by accumulating internal strain, analogous to the transition of Frank–van der Merwe (FM) to Stranski–Krastanov (SK) growth in epitaxial thin-film models. The exclusive role of the strain on dictating 2D layer orientation has been quantitatively verified by the transmission electron microscopy (TEM) strain mapping analysis. These centimeter-scale 2D PtTe2 layers exhibit layer orientation tunable metallic transports yielding the highest value of ∼1.7 × 106 S/m at a certain critical thickness, supported by a combined verification of density functional theory (DFT) and electrical measurements. Moreover, they show intrinsically high hydrophobicity manifested by the water contact angle (WCA) value up to ∼117°, which is the highest among all reported 2D TMDCs of comparable dimensions and geometries. Accordingly, this study confirms the high material quality of these emerging large-area 2D PtTe2 layers, projecting vast opportunities employing their tunable layer morphology and semimetallic properties from investigations of novel quantum phenomena to applications in electrocatalysis.

Platinum diselenide (PtSe2) is an emerging class of two-dimensional (2D) transition-metal dichalcogenide (TMD) crystals recently gaining substantial interest, owing to its extraordinary properties absent in conventional 2D TMD layers. Most interestingly, it exhibits a thickness-dependent semiconducting-to-metallic transition, i.e., thick 2D PtSe2 layers, which are intrinsically metallic, become semiconducting with their thickness reduced below a certain point. Realizing both semiconducting and metallic phases within identical 2D PtSe2 layers in a spatially well-controlled manner offers unprecedented opportunities toward atomically thin tailored electronic junctions, unattainable with conventional materials. In this study, beyond this thickness-dependent intrinsic semiconducting-to-metallic transition of 2D PtSe2 layers, we demonstrate that controlled plasma irradiation can “externally” achieve such tunable carrier transports. We grew wafer-scale very thin (a few nm) 2D PtSe2 layers by a chemical vapor deposition (CVD) method and confirmed their intrinsic semiconducting properties. We then irradiated the material with argon (Ar) plasma, which was intended to make it more semiconducting by thickness reduction. Surprisingly, we discovered a reversed transition of semiconducting to metallic, which is opposite to the prediction concerning their intrinsic thickness-dependent carrier transports. Through extensive structural and chemical characterization, we identified that the plasma irradiation introduces a large concentration of near-atomic defects and selenium (Se) vacancies in initially stoichiometric 2D PtSe2 layers. Furthermore, we performed density functional theory (DFT) calculations and clarified that the band-gap energy of such defective 2D PtSe2 layers gradually decreases with increasing defect concentration and dimensions, accompanying a large number of midgap energy states. This corroborative experimental and theoretical study decisively verifies the fundamental mechanism for this externally controlled semiconducting-to-metallic transition in large-area CVD-grown 2D PtSe2 layers, greatly broadening their versatility for futuristic electronics.

Benefiting from a large density of layer edges exposed on the surface, vertically aligned two-dimensional (2D) molybdenum disulfide (MoS2) layers have recently harvested excellent performances in the field of electrochemical catalysis and chemical sensing. With their increasing versatility for high-temperature, demanding applications, it is vital to identify their thermally driven structural and chemical stability, as well as to clarify its underlying principle. Despite various ex situ and in situ characterizations on horizontally aligned 2D MoS2 layers, the direct in situ heating of vertically aligned 2D MoS2 layers and the real-time observation of their near-atomic-scale dynamics have never been approached, leaving their thermal stability poorly understood. Moreover, the geometrical advantage of the surface-exposed vertically aligned 2D MoS2 layers is anticipated to unveil the structural dynamics of interlayer van der Waals (vdW) gaps and its correlation with thermal energy, unattainable with 2D MoS2 layers in any other geometry. Herein, we report a comprehensive in situ heating TEM study on cleanly transferred, vertically aligned 2D MoS2 layers up to 1000 °C. Several striking phenomena were newly observed in the course of heating: (1) formation and propagation of voids between the domains of vertical 2D MoS2 layers with distinct grain orientations starting at ∼875 °C; (2) subsequent decompositions of the 2D MoS2 layers accompanying a formation of Mo nanoparticles at ∼950 °C, a temperature much lower than the melting temperature of their bulk counterpart; and (3) initiation of decomposition from the surface-exposed 2D layer vertical edge sites, congruently supported by molecular dynamics (MD) simulation. These new findings will offer critical insights into better understanding the thermodynamic principle that governs the structural stability of general vdW 2D crystals as well as providing useful technological guidance for materials design and optimization in their potential high-temperature applications.