Achieving
a high-quality metal contact on two-dimensional (2D)
semiconductors still remains a major challenge due to the strong Fermi
level pinning and the absence of an effective doping method. Here,
we demonstrate high performance “all-PtSe2”
field-effect transistors (FETs) completely free from those issues,
enabled by the vertical integration of a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel.
Owing to its inherent thickness-dependent semiconductor-to-metal phase
transition, the transferred metallic PtSe2 transforms the
underlying semiconducting PtSe2 into metal at the junction.
Therefore, a fully metallized source/drain and semiconducting channel
could be realized within the same PtSe2 platform. The ultrathin
PtSe2 FETs with PtSe2 vdW contact exhibits excellent
gate tunability, superior mobility, and high ON current accompanied
by one order lower contact resistance compared to conventional Ti/Au
contact FETs. Our work provides a new device paradigm with a low resistance
PtSe2 vdW contact which can overcome a fundamental bottleneck
in 2D nanoelectronics.
Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material fieldeffect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe 2 FETs with different metal contacts. It is found that the carrier polarity in PdSe 2 FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe 2 . We demonstrate a complementary metal-oxidesemiconductor (CMOS) inverter using the same channel material PdSe 2 for n-and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe 2 -based CMOS logic circuits.
Monoubiquitination of the Fanconi anemia complementation group D2 (FANCD2) protein by the FA core ubiquitin ligase complex is the central event in the FA pathway. FANCA and FANCG play major roles in the nuclear localization of the FA core complex. Mutations of these two genes are the most frequently observed genetic alterations in FA patients, and most point mutations in FANCA are clustered in the C-terminal domain (CTD). To understand the basis of the FA-associated FANCA mutations, we determined the cryo-electron microscopy (EM) structures of Xenopus laevis FANCA alone at 3.35Å and 3.46 A resolution and two distinct FANCA-FANCG complexes at 4.59 and 4.84Å resolution, respectively. The FANCA CTD adopts an arc-shaped solenoid structure that forms a pseudo-symmetric dimer through its outer surface. FA-and cancer-associated point mutations are widely distributed over the CTD. The two different complex structures capture independent interactions of FANCG with either FANCA C-terminal HEAT repeats, or the N-terminal region. We show that mutations that disturb either of these two interactions prevent the nuclear localization of FANCA, thereby leading to an FA pathway defect. The structure provides insights into the function of FANCA CTD, and provides a framework for understanding FA-and cancer-associated mutations.
Recently, two-dimensional (2D) materials have attracted a great interest from researchers to overcome the limitations of conventional semiconductor materials. Specifically, 2D materials offer great advantages for low power consumption and...
Low contact resistance can be achieved in the metallic and semiconducting PtSe2 lateral heterostructure through the thickness-dependent phase transition in PtSe2.
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