The incorporation coefficients of As2 and As4, obtained from reflection high-energy electron diffraction intensity oscillations in the As-limited growth regime, are compared for the growth of GaAs on (001), (110), and (111)A surfaces by molecular beam epitaxy. The kinetic results are remarkably similar for (110) and (111)A, but very different from those obtained on (001). The incorporation coefficients decrease with increasing temperature for all three surfaces, with the effect being much more dramatic on (110) and (111) A. The low- and temperature-dependent incorporation coefficients on (110) and (111)A explain the need for high As:Ga flux ratios and low substrate temperatures in the preparation of high-quality GaAs epitaxial layers.
Mixing immiscible alloys has been a long standing challenge to both materials scientists and processing engineers. Despite great efforts made worldwide, including extensive space experiments, no casting techniques so far can produce the desirable fine and uniform dispersed microstructure. Based on extensive experience in mixing immiscible organic liquids offered by the polymer processing community, the authors have successfully developed a rheomixing process for mixing immiscible alloys. The rheomixing process utilises first the intensive shear stress-strain field offered by a twin screw extruder to create a fine homogeneous liquid dispersion within the miscibility gap and then the viscous force offered by a semisolid slurry at a temperature below the monotectic temperature is used to counterbalance the gravitational force and the Marangoni effect. A laboratory scale rheomixer has been designed and constructed to realise this two step mixing strategy. The Ga -Pb and Zn -Pb systems were selected to demonstrate the principles of rheomixing. The experimental results showed that the rheomixing process developed is capable of creating a fine and uniform microstructure from immiscible alloys. This paper describes the rheomixing process in detail and the preliminary experimental results on rheomixing in the Ga -Pb and Zn -Pb systems are discussed.MST/4664
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