This paper studies the overload turnoff failure in the insulated-gate bipolar transistor (IGBT) devices of power multichip modules for railway traction. After a detailed experimental analysis carried out through a dedicated test circuit, electrothermal simulations at device level are also presented. The simulation strategy has consisted in inducing a current and temperature mismatch in two IGBT cells. Results show that mismatches in the electrothermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure and reducing the lifetime of the power module. Concretely, simulations qualitatively demonstrate that localized hot-spot formation due to a dynamic breakdown could lead to a second breakdown mechanism.Index Terms-Insulated-gate bipolar transistor (IGBT) power module, power inverter reliability, railway applications, semiconductor device breakdown, semiconductor device thermal factors.
This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (E AV ) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.
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